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Effect of Mesa Sidewall Angle on 4H-Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride (2024)

First Author: Turner K.

Attributed to: TESiC-SuperJ - Trench Epitaxy for SiC Superjunctions: technology enabling low loss HVDC power electronics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/admi.202400466

Publication URI: http://dx.doi.org/10.1002/admi.202400466

Type: Journal Article/Review

Volume: 11

Parent Publication: Advanced Materials Interfaces

Issue: 33

ISSN: 21967350