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Design and Optimization of 3.3 kV Silicon Carbide Semi-Superjunction Schottky Power Devices (2024)

First Author: Melnyk K.

Attributed to: TESiC-SuperJ - Trench Epitaxy for SiC Superjunctions: technology enabling low loss HVDC power electronics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ispsd59661.2024.10579567

Publication URI: http://dx.doi.org/10.1109/ispsd59661.2024.10579567

Type: Other

Parent Publication: Proceedings of the International Symposium on Power Semiconductor Devices and ICs

ISSN: 10636854