📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Spin relaxation and donor-acceptor recombination of Se$^+$ in 28-silicon (2015)

First Author: Nardo R

Attributed to: Materials World Network: Spin entanglement using transient electrons in C and Si-based materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1503.05811

Publication URI: https://arxiv.org/abs/1503.05811

Type: Other