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Band Structure, Band Offsets, Substitutional Doping, and Schottky Barriers in InSe (2017)

First Author: Guo Y

Attributed to: Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1702.01144

Publication URI: https://arxiv.org/abs/1702.01144

Type: Other