Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $µ$m on InP substrates (2018)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1805.05223
Publication URI: https://arxiv.org/abs/1805.05223
Type: Other