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Acceptor levels of the carbon vacancy in $4H$-SiC: combining Laplace deep level transient spectroscopy with density functional modeling (2018)

First Author: Capan I

Attributed to: Instrument to identify defects and impurities in wide band gap semiconductors via excited states funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1812.06462

Publication URI: https://arxiv.org/abs/1812.06462

Type: Other