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Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb (2019)

First Author: Buckeridge J

Attributed to: Tier 2 Hub in Materials and Molecular Modelling funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1907.13063

Publication URI: https://arxiv.org/abs/1907.13063

Type: Other