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Properties of intrinsic point defects and dimers in hexagonal boron nitride (2019)

First Author: Strand J

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/ab4e5d

Publication URI: http://dx.doi.org/10.1088/1361-648x/ab4e5d

Type: Journal Article/Review

Parent Publication: Journal of Physics: Condensed Matter

Issue: 5