📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb (2019)

First Author: Buckeridge J

Attributed to: Semiconductor nanocrystals for solar cells: Tuning shape, size and interface effects funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1907.13063

Publication URI: https://arxiv.org/abs/1907.13063

Type: Other