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Route to high hole mobility in GaN via reversal of crystal-field splitting (2019)

First Author: Poncé S

Attributed to: Oxford Quantum Materials Platform Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1908.02069

Publication URI: https://arxiv.org/abs/1908.02069

Type: Other