Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias (2019)
Attributed to:
Engineering van der Waals heterostructures: from atomic level layer-by-layer assembly to printable innovative devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1911.08343
Publication URI: https://arxiv.org/abs/1911.08343
Type: Other