📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Exciton-phonon coupling strength in single-layer MoSe2 at room temperature (2020)

First Author: Li D

Attributed to: Engineering van der Waals heterostructures: from atomic level layer-by-layer assembly to printable innovative devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2012.11492

Publication URI: https://arxiv.org/abs/2012.11492

Type: Other