📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Decoration of growth sector boundaries with nitrogen vacancy centers in as-grown single crystal high-pressure high-temperature synthetic diamond (2020)

First Author: Diggle P

Attributed to: UK Quantum Technology Hub: NQIT - Networked Quantum Information Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevmaterials.4.093402

Publication URI: http://dx.doi.org/10.1103/physrevmaterials.4.093402

Type: Journal Article/Review

Parent Publication: Physical Review Materials

Issue: 9