The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors (2021)
Attributed to:
Sir Henry Royce Institute - Cambridge Equipment
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2104.07089
Publication URI: https://arxiv.org/abs/2104.07089
Type: Other