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Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation (2021)

First Author: Yang F

Attributed to: High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/ac16c3

Publication URI: http://dx.doi.org/10.1088/1361-6641/ac16c3

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 9