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Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods (2022)

First Author: Thomas B. O. Rockett

Attributed to: Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.60692/gang2-jqe42

Publication URI: https://gresis.osc.int//doi/10.60692/gang2-jqe42

Type: Other