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Analysis of interface trap induced ledge in ß-Ga2O3 based MOS structures using UV-assisted capacitance-voltage measurements (2024)

First Author: Bhat A

Attributed to: Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0203022

Publication URI: http://dx.doi.org/10.1063/5.0203022

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 19