Analysis of interface trap induced ledge in ß-Ga2O3 based MOS structures using UV-assisted capacitance-voltage measurements (2024)
Attributed to:
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0203022
Publication URI: http://dx.doi.org/10.1063/5.0203022
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 19