Turn-On Voltage Instability of ß -Ga 2 O 3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations (2024)
Attributed to:
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3393941
Publication URI: http://dx.doi.org/10.1109/ted.2024.3393941
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 6