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Turn-On Voltage Instability of ß -Ga 2 O 3 Trench Schottky Barrier Diodes With Different Fin Channel Orientations (2024)

First Author: Kim H

Attributed to: Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3393941

Publication URI: http://dx.doi.org/10.1109/ted.2024.3393941

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 6