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Deep level traps in (010) ß-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped ß-Ga2O3 substrates (2024)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0202581

Publication URI: http://dx.doi.org/10.1063/5.0202581

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 4