Deep level traps in (010) ß-Ga2O3 epilayers grown by metal organic chemical vapor deposition on Sn-doped ß-Ga2O3 substrates (2024)
Attributed to:
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0202581
Publication URI: http://dx.doi.org/10.1063/5.0202581
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 4