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Role of native point defects and Hg impurities in the electronic properties of Bi 4 I 4 (2024)

First Author: Cassemiro G

Attributed to: Single Crystal Growth at Warwick funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.110.224113

Publication URI: http://dx.doi.org/10.1103/physrevb.110.224113

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 22