Investigation of Low-Temperature ICP-CVD µ -Si N- and P-Doped/Undoped Layers for Fully ICP-CVD Electronics (2025)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3519061
Publication URI: http://dx.doi.org/10.1109/ted.2024.3519061
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 2