Empirical DC compact model for source-gated transistors using TCAD simulation data (2023)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/laedc58183.2023.10209131
Publication URI: http://dx.doi.org/10.1109/laedc58183.2023.10209131
Type: Conference/Paper/Proceeding/Abstract