In-Ga-Zn-O Source-Gated Transistors with 3nm SiO 2 Tunnel Layer on a Flexible Polyimide Substrate (2023)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ifetc57334.2023.10254818
Publication URI: http://dx.doi.org/10.1109/ifetc57334.2023.10254818
Type: Conference/Paper/Proceeding/Abstract