Bias and Temperature Stress Effects in IGZO TFTs and the Application of Step-Stress Testing to Increase Reliability Test Throughput (2024)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3462693
Publication URI: http://dx.doi.org/10.1109/ted.2024.3462693
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 11