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A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. (2025)

First Author: Boccarossa M

Attributed to: Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/mi16020188

PubMed Identifier: 40047681

Publication URI: http://europepmc.org/abstract/MED/40047681

Type: Journal Article/Review

Volume: 16

Parent Publication: Micromachines

Issue: 2

ISSN: 2072-666X