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Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor. (2022)

First Author: Esendag V

Attributed to: Monolithic on-chip integration of microscale laser diodes (uLDs) and electronics for micro-displays and visible light communications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma15176043

PubMed Identifier: 36079422

Publication URI: http://europepmc.org/abstract/MED/36079422

Type: Journal Article/Review

Volume: 15

Parent Publication: Materials (Basel, Switzerland)

Issue: 17

ISSN: 1996-1944