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Electrical Analysis of Atomic Layer Deposited Thin HfO 2 and HfO 2 /Ta 2 O 5 -Based Memristive Devices (2025)

First Author: Kumar S

Attributed to: Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2025.3539256

Publication URI: http://dx.doi.org/10.1109/ted.2025.3539256

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices