📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! Tell us what works, what doesn't, and how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community. Please send your feedback to gateway@ukri.org by 11 August 2025.

TCAD-based Analysis of Dynamic Transients of 4H-SiC Vertical NPN BJT (2024)

First Author: Hosseinzadehlish M

Attributed to: High-Density Active Silicon Carbide Power Electronics: Enabling Responsive Power Conversion funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce55643.2024.10861697

Publication URI: http://dx.doi.org/10.1109/ecce55643.2024.10861697

Type: Conference/Paper/Proceeding/Abstract