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Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon (2025)

First Author: Oliver R

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.114951

Publication URI: https://www.repository.cam.ac.uk/handle/1810/378643

Type: Journal Article/Review