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Engineering of Impact Ionization Characteristics in GaAs/GaAsBi Multiple Quantum Well Avalanche Photodiodes. (2024)

First Author: Tao X

Attributed to: Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsphotonics.4c01343

PubMed Identifier: 39584037

Publication URI: http://europepmc.org/abstract/MED/39584037

Type: Journal Article/Review

Volume: 11

Parent Publication: ACS photonics

Issue: 11

ISSN: 2330-4022