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Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator (2023)

First Author: Yan Z

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.3c00633

Publication URI: http://dx.doi.org/10.1021/acs.cgd.3c00633

Type: Journal Article/Review

Parent Publication: Crystal Growth & Design

Issue: 11