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Open-Gated GaN HEMT-Based pH Detectors Using Patterned Sensing Area (2024)

First Author: Varghese A

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jsen.2024.3477744

Publication URI: http://dx.doi.org/10.1109/jsen.2024.3477744

Type: Journal Article/Review

Parent Publication: IEEE Sensors Journal

Issue: 23