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Insights Into the Behavior of Leakage Current and Switching Instability in Lateral ß -Ga2O3 MOSFETs (2024)

First Author: Chen Z

Attributed to: Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3485028

Publication URI: http://dx.doi.org/10.1109/ted.2024.3485028

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 12