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The Impact of Varying the High-Temperature Post-Deposition Anneal Time or Temperature Ramp Rates on ALD-SiO 2 /4H-SiC Interfaces (2024)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/wipdaeurope62087.2024.10797374

Publication URI: http://dx.doi.org/10.1109/wipdaeurope62087.2024.10797374

Type: Conference/Paper/Proceeding/Abstract