📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate-Tunable Rectification Ability (2023)

First Author: Wang H

Attributed to: The Royce: Capitalising on the investment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/aelm.202300695

Publication URI: http://dx.doi.org/10.1002/aelm.202300695

Type: Journal Article/Review

Parent Publication: Advanced Electronic Materials

Issue: 4