Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator. (2023)
Attributed to:
CORNERSTONE: Capability for OptoelectRoNics, mEtamateRialS, nanoTechnOlogy aNd sEnsing
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.3c00633
PubMed Identifier: 37937193
Publication URI: http://europepmc.org/abstract/MED/37937193
Type: Journal Article/Review
Volume: 23
Parent Publication: Crystal growth & design
Issue: 11
ISSN: 1528-7483