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Growth mechanisms and defect structures of B12As2 epilayers grown on 4H-SiC substrates (2012)

First Author: Zhang Y

Attributed to: NSF: An investigation into the properties of B12As2, B4C and their heterostructures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2011.12.065

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2011.12.065

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 1

ISSN: 00220248