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High Mobility 4H-SiC MOSFET Using a Thin SiO2/Al2O3 Gate Stack (2018)

First Author: Arith F

Attributed to: Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/essderc.2018.8486896

Publication URI: http://dx.doi.org/10.1109/essderc.2018.8486896

Type: Conference/Paper/Proceeding/Abstract

ISSN: 19308876