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High-Mobility SiC MOSFETs Using a Thin-SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Gate Stack (2018)

First Author: Urresti J
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.924.494

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.924.494

Type: Journal Article/Review

Parent Publication: Materials Science Forum

ISSN: 16629752 02555476