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Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses (2023)

First Author: Yu R

Attributed to: Supergen Energy Networks hub 2018 funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tpel.2023.3290387

Publication URI: http://dx.doi.org/10.1109/tpel.2023.3290387

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Power Electronics

Issue: 9

ISSN: 19410107 08858993