Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire (2012)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4750251
Publication URI: http://dx.doi.org/10.1063/1.4750251
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 10
ISSN: 00036951