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On Electrons Mobility in Heavily Nitrogen Doped 4H-SiC (2017)

First Author: Vasilevskiy K

Attributed to: Active Sensor Structures for Extreme Environments funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.897.254

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.897.254

Type: Journal Article/Review

Parent Publication: Materials Science Forum

ISSN: 16629752 02555476