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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs (2012)

First Author: Silvestri M

Attributed to: Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2012.2214200

Publication URI: http://dx.doi.org/10.1109/led.2012.2214200

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 11

ISSN: 07413106