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Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs (2019)

First Author: Ortiz-Gonzalez J

Attributed to: High Current Module and Technologies Optimised for HVDC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.963.749

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.963.749

Type: Journal Article/Review

Parent Publication: Materials Science Forum

ISSN: 16629752 02555476