Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy (2018)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2882464
Publication URI: http://dx.doi.org/10.1109/led.2018.2882464
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
ISSN: 07413106