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Free-standing Lateral AlGaN/GaN Schottky Barrier Diode Based-on GaN-on-Si Technology for High Microwave Power Applications (2024)

First Author: Eblabla A

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.23919/eumic61603.2024.10732350

Publication URI: http://dx.doi.org/10.23919/eumic61603.2024.10732350

Type: Conference/Paper/Proceeding/Abstract