📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Transport Properties of Doped Wide Band Gap Layered Oxychalcogenide Semiconductors Sr 2 GaO 3 Cu Ch , Sr 2 ScO 3 Cu Ch , and Sr 2 InO 3 Cu Ch ( Ch = S or Se) (2024)

First Author: Malik Z

Attributed to: HIGH END COMPUTING MATERIALS CHEMISTRY CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.chemmater.4c02760

Publication URI: http://dx.doi.org/10.1021/acs.chemmater.4c02760

Type: Journal Article/Review

Parent Publication: Chemistry of Materials

Issue: 22