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Electronic structure and surface band bending of Sn-doped ß - Ga 2 O 3 thin films studied by x-ray photoemission spectroscopy and ab initio calculations (2024)

First Author: Zhang J

Attributed to: HIGH END COMPUTING MATERIALS CHEMISTRY CONSORTIUM funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.110.115120

Publication URI: http://dx.doi.org/10.1103/physrevb.110.115120

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 11