Instrumentation Requirements for Fast 130+ V/ns Switching of 1700 V, 35 mO SiC MOSFETs (2024)
Attributed to:
High-Bandwidth Sensing for Wide-bandgap Power Conversion
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Publication URI: https://hdl.handle.net/1983/a408c63d-61e4-400e-8fff-c3672fd8638e
Type: Conference/Paper/Proceeding/Abstract