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HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization (2025)

First Author: Cheng H

Attributed to: Millimetre-wave and Terahertz On-chip Circuit Test Cluster for 6G Communications and Beyond (TIC6G) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3499935

Publication URI: http://dx.doi.org/10.1109/ted.2024.3499935

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 1